| PART |
Description |
Maker |
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
| HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
| K5C6417YTM/K5C6417YBM |
64M Bit (4Mx16) Four Bank NOR Flash Memory Data Sheet
|
Samsung Electronic
|
| KMM372C883CS KMM372C803CK KMM372C883CK KMM372C803C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372V883BS KMM372V803BK KMM372V803BS KMM372V883B |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CMS6416LAX-75XX |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
| V53C365805A |
3.3 Volt 8M X 8 EDO Page Mode CMOS Dynamic RAM(3.3V 8Mx8 EDO页面模式CMOS动态RAM)
|
Mosel Vitelic, Corp.
|
| HSD16M64D16A HSD16M64D16A-10 HSD16M64D16A-10L HSD1 |
Synchronous DRAM Module 128Mbyte (16Mx64bit), DIMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
HANBIT[Hanbit Electronics Co.,Ltd]
|
| KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HSD8M72D9A-10 HSD8M72D9A-10H HSD8M72D9A-10L HSD8M7 |
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
|
